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Preliminary data
HiPerF erFAST HiPerFAST with Diode
Pac ack Combi Pack
TM
IGBT
IXGH22N50BU1 IXGH22N50BU1 IXGH22N50BU1S IXGH22N50BU1S
VCES IC(25) VCE(sat)typ tfi(typ)
TO-247 SMD*
= 500 V = 44 A = 2.1 V = 55 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 500 500 20 30 44 22 88 ICM = 44 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C TO-247 AD
G E C (TAB)
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
*Add suffix letter "S" for surface mountable package
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD TO-247 SMD TO-247 AD
1.13/10 Nm/lb.in. 4 6 g g
Features * International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD * High frequency IGBT and antiparallel FRED in one package * High current handling capability * HiPerFASTTM HDMOSTM process * MOS Gate turn-on - drive simplicity Applications * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo and robot drives * DC choppers Advantages * Space savings (two devices in one package) * High power density * Suitable for surface mounting * Very low switching losses for high frequency applications * Easy to mount with 1 screw,TO-247 (insulated mounting screw hole)
97509(2/97)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25C TJ = 125C V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250A, VGE = 0 V = 250 A, VCE = VGE
5.5 200 8 100 2.1 2.5
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 1997 IXYS All rights reserved
IXGH22N50BU1 IXGH22N50BU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 16 1450 120 37 90 11 30 15 30 0.15 100 55 0.3 15 30 0.15 140 100 0.6 S
IXGH22N50BU1S IXGH22N50BU1S
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz
P
pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.83 K/W K/W TO-247 SMD Outline
IC = IC90, VGE = 15 V, VCE = 0.5 VCES 25 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 10 Note 1 125 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 10 Note 1
e
Dim.
150 110 0.5
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
0.25
Reverse Diode (FRED) Symbol VF IRM trr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 150 35 15 50 V A ns ns
1. Gate 2. Collector 3. Emitter 4. Collector
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 240 A/s VR = 360 V TJ =125C IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C
1 K/W
Note 1: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Min. Recommended Footprint (Dimensions in inches and mm)
Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC
Inches Min. Max. .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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